Транзистор: IGBT; PT; 600В; 27А; 250Вт; TO247-3 Технические параметры
- Case: TO247-3
- Collector current: 27A
- Collector-emitter voltage: 600V
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±20V
- Gate charge: 55нКл
- Kind of package: tube
- Manufacturer: MICROSEMI
- Mounting: THT
- Power dissipation: 250W
- Pulsed collector current: 65A
- Technology: PT
- Turn-off time: 160ns
- Turn-on time: 20ns
- Type of transistor: IGBT