Транзистор: N-MOSFET; полевой; 1кВ; 9А; Idm: 55А; 500Вт; D3PAK Технические параметры
- Case: D3PAK
- Channel kind: enhanced
- Drain current: 9A
- Drain-source voltage: 1kV
- Gate charge: 120нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: SMD
- On-State Resistance: 880mΩ
- Polarisation: unipolar
- Power dissipation: 500W
- Pulsed drain current: 55A
- Technology: POWER MOS 8®
- Type of transistor: N-MOSFET