Транзистор: N-MOSFET; полевой; 1,2кВ; 9А; Idm: 50А; 625Вт; D3PAK Технические параметры
- Case: D3PAK
- Channel kind: enhanced
- Drain current: 9A
- Drain-source voltage: 1.2kV
- Gate charge: 145нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: SMD
- On-State Resistance: 1.2Ω
- Polarisation: unipolar
- Power dissipation: 625W
- Pulsed drain current: 50A
- Technology: POWER MOS 8®
- Type of transistor: N-MOSFET