Модуль; SiC диод/тиристор/транзистор; 700В; 98А; SP3F; Idm: 250А Технические параметры
- Case: SP3F
- Drain current: 98A
- Drain-source voltage: 700V
- Electrical mounting: Press-in PCB
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 19mΩ
- Power dissipation: 365W
- Pulsed drain current: 250A
- Semiconductor structure: SiC diode/tiristor/transistor
- Technology: SiC
- Topology: Vienna Rectifier