Модуль; SiC диод/тиристор/транзистор; 700В; 189А; SP4; Idm: 476А Технические параметры
- Case: SP4
- Drain current: 189A
- Drain-source voltage: 700V
- Electrical mounting: screw
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 9.5mΩ
- Power dissipation: 674W
- Pulsed drain current: 476A
- Semiconductor structure: SiC diode/tiristor/transistor
- Technology: SiC
- Topology: Vienna Rectifier