Модуль; диод SiC/транзистор; 700В; 278А; SP6P; Press-in PCB; 966Вт Технические параметры
- Case: SP6P
- Drain current: 278A
- Drain-source voltage: 700V
- Electrical mounting: Press-in PCB
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 6.4mΩ
- Power dissipation: 966W
- Pulsed drain current: 700A
- Semiconductor structure: SiC diode/transistor
- Technology: SiC
- Topology: NTC thermistor