Модуль; диод SiC/транзистор; 700В; 281А; SP3F; Press-in PCB; 988Вт Технические параметры
- Case: SP3F
- Drain current: 281A
- Drain-source voltage: 700V
- Electrical mounting: Press-in PCB
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 6.4mΩ
- Power dissipation: 988W
- Pulsed drain current: 700A
- Semiconductor structure: SiC diode/transistor
- Technology: SiC
- Topology: NTC thermistor