Модуль; диод SiC/транзистор; 700В; 538А; SP6C; SiC; винтами Технические параметры
- Case: SP6C
- Drain current: 538A
- Drain-source voltage: 700V
- Electrical mounting: screw
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 2.5mΩ
- Semiconductor structure: SiC diode/transistor
- Technology: SiC
- Topology: MOSFET half-bridge