Модуль; диод SiC/транзистор; 1,2кВ; 200А; SP6P; Press-in PCB; SiC Технические параметры
- Case: SP6P
- Drain current: 200A
- Drain-source voltage: 1.2kV
- Electrical mounting: Press-in PCB
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 10.4mΩ
- Power dissipation: 1042W
- Pulsed drain current: 500A
- Semiconductor structure: SiC diode/transistor
- Technology: SiC
- Topology: NTC thermistor