Модуль; диод SiC/транзистор; 1,2кВ; 138А; SP3F; Press-in PCB; SiC Технические параметры
- Case: SP3F
- Drain current: 138A
- Drain-source voltage: 1.2kV
- Electrical mounting: Press-in PCB
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 16mΩ
- Power dissipation: 745W
- Pulsed drain current: 350A
- Semiconductor structure: SiC diode/transistor
- Technology: SiC
- Topology: NTC thermistor