Модуль; диод SiC/транзистор; 1,2кВ; 268А; SP3F; Press-in PCB; SiC Технические параметры
- Case: SP3F
- Drain current: 268A
- Drain-source voltage: 1.2kV
- Electrical mounting: Press-in PCB
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 7.8mΩ
- Power dissipation: 1409W
- Pulsed drain current: 675A
- Semiconductor structure: SiC diode/transistor
- Technology: SiC
- Topology: NTC thermistor