Модуль; диод SiC/транзистор; 1,2кВ; 395А; SP6C; Idm: 990А; 2031Вт Технические параметры
- Case: SP6C
- Drain current: 395A
- Drain-source voltage: 1.2kV
- Electrical mounting: screw
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 5.2mΩ
- Power dissipation: 2031W
- Pulsed drain current: 990A
- Semiconductor structure: SiC diode/transistor
- Technology: SiC
- Topology: NTC thermistor