Модуль; диод SiC/транзистор; 1,2кВ; 584А; D3; Idm: 1400А; 2,97кВт Технические параметры
- Case: D3
- Drain current: 584A
- Drain-source voltage: 1.2kV
- Electrical mounting: screw
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 3.5mΩ
- Power dissipation: 2.97kW
- Pulsed drain current: 1400A
- Semiconductor structure: SiC diode/transistor
- Technology: SiC
- Topology: MOSFET half-bridge + serial diodes