Модуль; SiC диод/тиристор/транзистор; 900В; SP3F; Press-in PCB Технические параметры
- Case: SP3F
- Drain-source voltage: 900V
- Electrical mounting: Press-in PCB
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- Semiconductor structure: SiC diode/tiristor/transistor
- Technology: SiC
- Topology: Vienna Rectifier