Модуль; SiC диод/тиристор/транзистор; 600В; 40А; SP6P; SiC Технические параметры
- Case: SP6P
- Drain current: 40A
- Drain-source voltage: 600V
- Electrical mounting: Press-in PCB
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 45mΩ
- Semiconductor structure: SiC diode/tiristor/transistor
- Technology: SiC
- Topology: Vienna Rectifier