Модуль; SiC диод/тиристор/транзистор; 600В; 81А; SP4; SiC; винтами Технические параметры
- Case: SP4
- Drain current: 81A
- Drain-source voltage: 600V
- Electrical mounting: screw
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 23mΩ
- Semiconductor structure: SiC diode/tiristor/transistor
- Technology: SiC
- Topology: Vienna Rectifier