Модуль; одиночный транзистор; 1,2кВ; 37А; SOT227B; винтами; 208Вт Технические параметры
- Case: SOT227B
- Drain current: 37A
- Drain-source voltage: 1.2kV
- Electrical mounting: screw
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 50mΩ
- Power dissipation: 208W
- Pulsed drain current: 105A
- Semiconductor structure: single transistor
- Technology: SiC