Модуль; диод/транзистор; 500В; 33А; ISOTOP; Ugs: ±30В; винтами Технические параметры
- Case: ISOTOP
- Drain current: 33A
- Drain-source voltage: 500V
- Electrical mounting: screw
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 100mΩ
- Polarisation: unipolar
- Power dissipation: 450W
- Pulsed drain current: 176A
- Semiconductor structure: diode/transistor
- Technology: POWER MOS 5®
- Topology: boost chopper