Транзистор: N-MOSFET; 1кВ; 44А; 1560Вт; PLUS264™ Технические параметры
- Case: PLUS264™
- Channel kind: enhanced
- Continuous Drain Current (Id): 44A
- Drain current: 44A
- Drain-source voltage: 1kV
- Drain-Source Voltage (Vds): 1kV
- Fall Time: 28ns
- Gate charge: 264нКл
- Gate-Source Voltage: 30V
- Height Units: 3
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 220mΩ
- On-State Resistance: 0.22Ω
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: ISOPLUS264
- Packaging: Tube
- Phases: Single
- Power dissipation: 1560W
- Power Dissipation (Pd): 1.56kW
- Reflow Temperature Max.: 260°C
- Rise Time: 30ns
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 66ns
- Turn-ON Delay Time: 48ns
- Type of transistor: N-MOSFET
