Power transistor TO-3 PNP -100 V Семейство Силовые транзисторы Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 4V
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 2V
- Collector-Emitter Voltage (Vceo): 100V
- Continuous Collector Current (Ic): 20A
- Manufacturer: ON SEMICONDUCTOR
- Mounting Type: Through Hole
- Operating Temperature Max.: 200°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: PNP
- Outputs: 2
- Package Type: TO-204
- Packaging: Tray Foam
- Phases: Single
- Power Dissipation (Pd): 160W
- Quantity: 100
- Reflow Temperature Max.: 260°C
- Ripple & Noise (%): -999
- Transit Frequency: 4MHz