Транзистор: NPN; биполярный; 100В; 8А; 1,75Вт; DPAK Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 4.5V
- Case: DPAK
- Collector current: 8A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 4V
- Collector-Base Voltage (Vcbo): 100V
- Collector-emitter voltage: 100V
- Collector-Emitter Voltage (Vceo): 100V
- Continuous Collector Current (Ic): 8A
- Current gain: 300
- Emitter-Base Voltage (Vebo): 5V
- Frequency: 4MHz
- Height Units: 3
- Kind of package: tape
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Package Type: DPAK
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: bipolar
- Power dissipation: 1.75W
- Power Dissipation (Pd): 20W
- Reflow Temperature Max.: 260°C
- Sheets: 1000
- Transit Frequency: 4MHz
- Type of transistor: NPN