Транзистор: NPN; биполярный; 90В; 30А; 200Вт; TO3 Семейство Силовые транзисторы Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 1.3V
- Case: TO3
- Collector current: 30A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 800mV
- Collector-emitter voltage: 90V
- Collector-Emitter Voltage (Vceo): 90V
- Continuous Collector Current (Ic): 30A
- Current gain: 25...100
- Emitter-Base Voltage (Vebo): 4V
- Frequency: 2MHz
- Kind of package: bulk
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- Mounting Type: Through Hole
- Operating Temperature Max.: 200°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Outputs: 2
- Package Type: TO-204AA
- Packaging: Tray Foam
- Phases: Single
- Polarisation: bipolar
- Power dissipation: 200W
- Power Dissipation (Pd): 200W
- Quantity: 100
- Reflow Temperature Max.: 260°C
- Ripple & Noise (%): -999
- Transit Frequency: 2MHz
- Type of transistor: NPN
