Транзистор: N-MOSFET; полевой; 900В; 1,1А; 54Вт; TO220AB Технические параметры
- #Promotion: vishay_201906
- Case: TO220AB
- Channel kind: enhanced
- Drain current: 1.1A
- Drain-source voltage: 900V
- Gate charge: 38нКл
- Gate-source voltage: ±20V
- Kind of package: tube
- Manufacturer: Vishay
- Mounting: THT
- On-State Resistance: 8Ω
- Polarisation: unipolar
- Power dissipation: 54W
- Type of transistor: N-MOSFET