Транзистор: N-MOSFET; полевой; RF; 40В; 2,5А; 31,7Вт; SO10RF; SMT Технические параметры
- Case: SO10RF
- Channel kind: enhanced
- Drain current: 2.5A
- Drain-source voltage: 40V
- Efficiency: 52%
- Electrical mounting: SMT
- Frequency: 500MHz
- Gain: 17dB
- Gate-source voltage: ±20V
- Kind of package: tube
- Manufacturer: STM
- Output power: 3W
- Polarisation: unipolar
- Power dissipation: 31.7W
- Transistor kind: RF
- Type of transistor: N-MOSFET