Транзистор: N-MOSFET; полевой; 85В; 148А; Idm: 850А; 300Вт; TO220AB Технические параметры
- Case: TO220AB
- Channel kind: enhanced
- Drain current: 148A
- Drain-source voltage: 85V
- Gate charge: 140нКл
- Gate-source voltage: ±20V
- Kind of package: tube
- Manufacturer: Diotec Semiconductor
- Mounting: THT
- On-State Resistance: 4.1mΩ
- Polarisation: unipolar
- Power dissipation: 300W
- Pulsed drain current: 850A
- Radiator thickness: max. 1.2mm
- Type of transistor: N-MOSFET