Транзистор: N-MOSFET; полевой; 100В; 80А; Idm: 380А; 200Вт; TO220AB Технические параметры
- Case: TO220AB
- Channel kind: enhanced
- Drain current: 80A
- Drain-source voltage: 100V
- Gate charge: 85нКл
- Gate-source voltage: ±20V
- Kind of package: tube
- Manufacturer: Diotec Semiconductor
- Mounting: THT
- On-State Resistance: 9.9mΩ
- Polarisation: unipolar
- Power dissipation: 200W
- Pulsed drain current: 380A
- Radiator thickness: max. 1.2mm
- Type of transistor: N-MOSFET