Транзистор: N-MOSFET; полевой; 65В; 62А; Idm: 310А; 160Вт; TO220AB Технические параметры
- Case: TO220AB
- Channel kind: enhanced
- Drain current: 62A
- Drain-source voltage: 65V
- Gate charge: 94нКл
- Gate-source voltage: ±20V
- Kind of package: tube
- Manufacturer: Diotec Semiconductor
- Mounting: THT
- On-State Resistance: 5.7mΩ
- Polarisation: unipolar
- Power dissipation: 160W
- Pulsed drain current: 310A
- Radiator thickness: max. 1.2mm
- Type of transistor: N-MOSFET