Транзистор: N-MOSFET; полевой; 60В; 35А; Idm: 90А; 85Вт; TO220AB Технические параметры
- Case: TO220AB
- Channel kind: enhanced
- Drain current: 35A
- Drain-source voltage: 60V
- Gate charge: 50нКл
- Gate-source voltage: ±20V
- Kind of package: tube
- Manufacturer: Diotec Semiconductor
- Mounting: THT
- On-State Resistance: 14mΩ
- Polarisation: unipolar
- Power dissipation: 85W
- Pulsed drain current: 90A
- Radiator thickness: max. 1.2mm
- Type of transistor: N-MOSFET