Bipolar (BJT) Single Transistor, Audio, PNP, -80 V, 40 MHz, 70 W, -10 A, 60 Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 1.5V
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 1V
- Collector-Emitter Voltage (Vceo): 80V
- Continuous Collector Current (Ic): 10A
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Manufacturer: ON SEMICONDUCTOR
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: PNP
- Package Type: TO-220
- Packaging: Tube
- Phases: Single
- Power Dissipation (Pd): 50W
- Ripple & Noise (%): -999
- Shoe Size: 40