Транзистор: NPN; биполярный; 250В; 15А; 150Вт; TO3P Технические параметры
- Application: automotive industry
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 1V
- Case: TO3P
- Collector current: 15A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 1V
- Collector-Base Voltage (Vcbo): 250V
- Collector-emitter voltage: 250V
- Collector-Emitter Voltage (Vceo): 250V
- Continuous Collector Current (Ic): 15A
- Current gain: 75...150
- Emitter-Base Voltage (Vebo): 5V
- Frequency: 30MHz
- Height Units: 3
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Package Type: TO-3P
- Packaging: Tube
- Phases: Single
- Polarisation: bipolar
- Power dissipation: 150W
- Power Dissipation (Pd): 150W
- Sheets: 150
- Transit Frequency: 30MHz
- Type of transistor: NPN
