Транзистор: PNP; биполярный; 65В; 0,1А; 300мВт; SOT23 Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 900mV
- Case: SOT23
- Collector current: 0.1A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 650mV
- Collector-Base Voltage (Vcbo): 80V
- Collector-emitter voltage: 65V
- Collector-Emitter Voltage (Vceo): 65V
- Configuration: Dual
- Continuous Collector Current (Ic): 100mA
- Current gain: 220...475
- Emitter-Base Voltage (Vebo): 5V
- Frequency: 100MHz
- Height Units: 6
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: PNP
- Package Type: SOT-363
- Packaging: Tape & Reel
- Polarisation: bipolar
- Power dissipation: 300mW
- Power Dissipation (Pd): 380mW
- Reflow Temperature Max.: 260°C
- Sheets: 150
- Transit Frequency: 100MHz
- Type of transistor: PNP