Транзистор: NPN; биполярный; 60В; 200мА; 360мВт; TO92 Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 950mV
- Case: TO92
- Collector current: 200mA
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 300mV
- Collector-Base Voltage (Vcbo): 60V
- Collector-emitter voltage: 40V
- Collector-Emitter Voltage (Vceo): 40V
- Continuous Collector Current (Ic): 200mA
- Emitter-Base Voltage (Vebo): 6V
- Frequency: 250MHz
- Height Units: 3
- Housing: TO92
- Mount: THT
- Mounting: THT
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: NPN
- Package Type: TO-92
- Packaging: Ammo Pack
- Phases: Single
- Polarisation: bipolar
- Polarity: биполярный
- Power Dissipation (Pd): 625mW
- Reflow Temperature Max.: 260°C
- Sheets: 300
- Transistor type: NPN
- Transit Frequency: 300MHz
- Мощность: 360mW
- Напряжение коллектор-эмиттер: 60V