ON Semiconductor NJW3281G Транзистор Технические параметры
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 600mV
- Collector-Base Voltage (Vcbo): 250V
- Collector-Emitter Voltage (Vceo): 250V
- Continuous Collector Current (Ic): 15A
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Manufacturer: ON SEMICONDUCTOR
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Package Type: TO-3P
- Packaging: Tube
- Phases: Single
- Power Dissipation (Pd): 200W
- Ripple & Noise (%): -999
- Sheets: 150
- Transit Frequency: 30MHz
