ON Semiconductor KSA1381ESTU Транзистор Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 1V
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 600mV
- Collector-Base Voltage (Vcbo): 300V
- Collector-Emitter Voltage (Vceo): 300V
- Continuous Collector Current (Ic): 100mA
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Manufacturer: ON SEMICONDUCTOR
- Microstep Resolution: 200
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: PNP
- Package Type: TO-126
- Packaging: Tube
- Phases: Single
- Power Dissipation (Pd): 1.2W
- Transit Frequency: 150MHz
