General Purpose Transistor, TO-92, NPN, 80V Технические параметры
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 500mV
- Collector-Base Voltage (Vcbo): 100V
- Collector-Emitter Voltage (Vceo): 80V
- Continuous Collector Current (Ic): 1A
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Manufacturer: ON SEMICONDUCTOR
- Mounting Type: Through Hole
- Number of Sheets: 25
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: NPN
- Package Type: TO-92
- Packaging: Tape & Reel
- Phases: Single
- Power Dissipation (Pd): 830mW
- Ripple & Noise (%): -999
- Transit Frequency: 100MHz
