Darlington Transistor, TO-92, NPN, 45V Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 900mV
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 600mV
- Collector-Base Voltage (Vcbo): 50V
- Collector-Emitter Voltage (Vceo): 45V
- Continuous Collector Current (Ic): 100mA
- DC Current Gain (hFE): 110
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Manufacturer: ON SEMICONDUCTOR
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Package Type: TO-92
- Packaging: Bulk
- Phases: Single
- Power Dissipation (Pd): 500mW
- Transit Frequency: 300MHz