Диод: импульсный; THT; 1кВ; 3А; Ifsm: 200А; DO27; Ufmax: 1В; Ir: 50мкА Технические параметры
- Case: DO27
- Diode type: switching
- Forward Current (If): 3A
- Forward Voltage (Vf): 1V
- Leakage current: 50µA
- Length: 7.3mm
- Load current: 3A
- Manufacturer: ON SEMICONDUCTOR
- Max. forward impulse current: 200A
- Max. forward voltage: 1V
- Mounting: THT
- Mounting Type: Through Hole
- Off state voltage max.: 1kV
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Outputs: 2
- Package Type: DO-201AD
- Packaging: Bulk
- Peak Non-Repetitive Surge Current (Itsm): 200A
- Phases: Single
- Reverse Current: 10µA
- Reverse Repetitive Voltage Max. (Vrrm): 1kV
- Ripple & Noise (%): -999
- Semiconductor structure: single diode
- Width: 5.3mm