Модуль; два последовательных диода; 1,6кВ; 181А; Y4-M6; Igt:200мА Технические параметры
- Case: Y4-M6
- Current It(av): 181A
- Electrical mounting: screw
- Forward Voltage (Vf): 1.03V
- Gate current: 200mA
- Gate Trigger Current (Igt): 150mA
- Gate Trigger Voltage (Vgt): 2.5V
- Height Units: 5
- Insulation Voltage: 3.6kV
- Kind of package: bulk
- Load current: 181A
- Manufacturer: IXYS
- Max. forward impulse current: 5.1kA
- Max. forward voltage: 1.25V
- Max. load current: 300A
- Module type: diode-thyristor
- Mounting: screw
- Mounting Type: SMD
- Off state voltage max.: 1.6kV
- ON State RMS Current (It(rms)): 300A
- Operating Temperature Max.: 100°C
- Operating Temperature Min.: -40°C
- Package Type: Y4
- Packaging: Box
- Peak Non-Repetitive Surge Current (Itsm): 6kA
- Peak Repetitive Off-State Voltage (Vdrm): 1.6kV
- Semiconductor structure: double series
